发明授权
US08110424B2 Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
有权
III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
- 专利标题： Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
- 专利标题（中）： III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
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申请号： US12419590申请日： 2009-04-07
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公开(公告)号： US08110424B2公开(公告)日： 2012-02-07
- 发明人: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- 申请人地址： KR Gyunggi-do
- 专利权人： Samsung LED Co., Ltd.
- 当前专利权人： Samsung LED Co., Ltd.
- 当前专利权人地址： KR Gyunggi-do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2008-0100773 20081014
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
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