发明授权
US08084309B2 Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask
有权
非常薄的绝缘体上硅（ETSOI）互补金属氧化物半导体（CMOS），其具有由单个掩模形成的原位掺杂源极和漏极区域
- 专利标题： Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask
- 专利标题（中）： 非常薄的绝缘体上硅（ETSOI）互补金属氧化物半导体（CMOS），其具有由单个掩模形成的原位掺杂源极和漏极区域
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申请号： US12542179申请日： 2009-08-17
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公开(公告)号： US08084309B2公开(公告)日： 2011-12-27
- 发明人: Kangguo Cheng , Bruce B. Doris , Ghavam G. Shahidi
- 申请人： Kangguo Cheng , Bruce B. Doris , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A method of fabricating an electronic structure is provided that includes forming a first conductivity doped first semiconductor material on the SOI semiconductor layer of a substrate. The SOI semiconductor layer has a thickness of less than 10 nm. The first conductivity in-situ doped first semiconductor material is removed from a first portion of the SOI semiconductor layer, wherein a remaining portion of the first conductivity in-situ doped first semiconductor material is present on a second portion of SOI semiconductor layer. A second conductivity in-situ doped second semiconductor material is formed on the first portion of the SOI semiconductor layer, wherein a mask prohibits the second conductivity in-situ doped semiconductor material from being formed on the second portion of the SOI semiconductor layer. The dopants from the first and second conductivity in-situ doped semiconductor materials are diffused into the first semiconductor layer to form dopant regions.
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