Invention Grant
US08045380B2 Flash memory device and program method of flash memory device using different voltages
有权
闪存器件和使用不同电压的闪存器件的程序方法
- Patent Title: Flash memory device and program method of flash memory device using different voltages
- Patent Title (中): 闪存器件和使用不同电压的闪存器件的程序方法
-
Application No.: US12939251Application Date: 2010-11-04
-
Publication No.: US08045380B2Publication Date: 2011-10-25
- Inventor: Dae-Seok Byeon , Young-Ho Lim
- Applicant: Dae-Seok Byeon , Young-Ho Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2006-72189 20060731
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A flash memory and a program method of the flash memory include applying a pass voltage to word lines to boost a channel voltage, which is discharged to a ground voltage. A program voltage is applied to a selected word line and a local voltage is applied to at least one word line supplied with the pass voltage while the program voltage is being applied to the selected word line. The local voltage is lower than the pass voltage and equal to or higher than the ground voltage. The boosted channel voltage may be discharged before the program voltage is applied to the selected word line.
Public/Granted literature
- US20110044108A1 FLASH MEMORY DEVICE AND PROGRAM METHOD OF FLASH MEMORY DEVICE USING DIFFERENT VOLTAGES Public/Granted day:2011-02-24
Information query
