发明授权
US08040736B2 Non-volatile memory device, computing system and wordline driving method
有权
非易失性存储器件,计算系统和字线驱动方法
- 专利标题: Non-volatile memory device, computing system and wordline driving method
- 专利标题(中): 非易失性存储器件,计算系统和字线驱动方法
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申请号: US12433685申请日: 2009-04-30
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公开(公告)号: US08040736B2公开(公告)日: 2011-10-18
- 发明人: Joon Young Kwak
- 申请人: Joon Young Kwak
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2008-0049773 20080528
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.
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