发明授权
US08040736B2 Non-volatile memory device, computing system and wordline driving method 有权
非易失性存储器件,计算系统和字线驱动方法

Non-volatile memory device, computing system and wordline driving method
摘要:
A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.
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