发明授权
US08039872B2 Nitride semiconductor device including a group III nitride semiconductor structure
有权
包括III族氮化物半导体结构的氮化物半导体器件
- 专利标题： Nitride semiconductor device including a group III nitride semiconductor structure
- 专利标题（中）： 包括III族氮化物半导体结构的氮化物半导体器件
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申请号： US12219671申请日： 2008-07-25
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公开(公告)号： US08039872B2公开(公告)日： 2011-10-18
- 发明人: Hirotaka Otake
- 申请人： Hirotaka Otake
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2007-193410 20070725
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A nitride semiconductor device according to the present invention includes a Group III nitride semiconductor; and an insulating film containing oxygen formed on the surface of the Group III nitride semiconductor, wherein the nitrogen concentration in a region provided with the insulating film is higher than the nitrogen concentration in a region not provided with the insulating film on the surface of the group III nitride semiconductor.
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