发明授权
- 专利标题： Semiconductor memory device and method for operating the same
- 专利标题（中）： 半导体存储器件及其操作方法
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申请号： US12488069申请日： 2009-06-19
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公开(公告)号： US08036026B2公开(公告)日： 2011-10-11
- 发明人: Kwang-Myoung Rho , Woo-Hyun Seo
- 申请人： Kwang-Myoung Rho , Woo-Hyun Seo
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2009-0041585 20090513
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A semiconductor memory device includes a plurality of memory cells configured to store data having a polarity corresponding to a direction of current flowing through a source line and a bit line; and a precharge driving unit configured to precharge the bit line to a voltage corresponding to the data in response to a precharging signal before the data are stored in the memory cells.
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