Invention Grant
- Patent Title: Methods of forming devices comprising carbon nanotubes
- Patent Title (中): 形成包含碳纳米管的器件的方法
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Application No.: US12235244Application Date: 2008-09-22
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Publication No.: US08034315B2Publication Date: 2011-10-11
- Inventor: Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
- Applicant: Nishant Sinha , Gurtej S. Sandhu , Eugene Marsh , Neil Greeley , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.
Public/Granted literature
- US20100276656A1 Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices Comprising Carbon Nanotubes Public/Granted day:2010-11-04
Information query
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