Invention Grant
- Patent Title: Semiconductor device and method for isolating the same
- Patent Title (中): 半导体装置及其隔离方法
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Application No.: US12504427Application Date: 2009-07-16
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Publication No.: US08022501B2Publication Date: 2011-09-20
- Inventor: Seung-Ho Pyi
- Applicant: Seung-Ho Pyi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR2003-98450 20031229
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/70 ; H01L23/522
Abstract:
The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one silicon pillar at a bottom portion of the trench, wherein the silicon pillar become sidewalls of micro trenches; and a device isolation layer selectively and partially filled into the plurality of micro trenches.
Public/Granted literature
- US20090278225A1 SEMICONDUCTOR DEVICE AND METHOD FOR ISOLATING THE SAME Public/Granted day:2009-11-12
Information query
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