Invention Grant
US08022413B2 Group III nitride semiconductor substrate and method for cleaning the same
有权
III族氮化物半导体衬底及其清洗方法
- Patent Title: Group III nitride semiconductor substrate and method for cleaning the same
- Patent Title (中): III族氮化物半导体衬底及其清洗方法
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Application No.: US13082916Application Date: 2011-04-08
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Publication No.: US08022413B2Publication Date: 2011-09-20
- Inventor: Kenji Fujito , Hirotaka Oota , Shuichi Kubo
- Applicant: Kenji Fujito , Hirotaka Oota , Shuichi Kubo
- Applicant Address: JP Tokyo
- Assignee: Misubishi Chemical Corporation
- Current Assignee: Misubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-188603 20070719
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.
Public/Granted literature
- US20110180904A1 GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME Public/Granted day:2011-07-28
Information query
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