Invention Grant
- Patent Title: Method of operating nonvolatile memory device
- Patent Title (中): 操作非易失性存储器件的方法
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Application No.: US12071960Application Date: 2008-02-28
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Publication No.: US08018781B2Publication Date: 2011-09-13
- Inventor: Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim , Jung-dal Choi , Ki-hwan Choi , Jae-sung Sim , Seung-hyun Moon
- Applicant: Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim , Jung-dal Choi , Ki-hwan Choi , Jae-sung Sim , Seung-hyun Moon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0020622 20070228; KR10-2007-0037166 20070416; KR10-2007-0087691 20070830
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Provided is a method of operating a nonvolatile memory device to perform an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and a DC perturbation pulse to the nonvolatile memory device to perform the erase operation.
Public/Granted literature
- US20080205156A1 Method of operating nonvolatile memory device Public/Granted day:2008-08-28
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