发明授权
- 专利标题： Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations
- 专利标题（中）： 具有磷和砷离子注入的NOR闪存的制造方法
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申请号： US12562870申请日： 2009-09-18
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公开(公告)号： US08017488B2公开(公告)日： 2011-09-13
- 发明人: Sheng-Da Liu , Yider Wu
- 申请人： Sheng-Da Liu , Yider Wu
- 申请人地址： unknown Chu-Pei
- 专利权人： EON Silicon Solutions Inc.
- 当前专利权人： EON Silicon Solutions Inc.
- 当前专利权人地址： unknown Chu-Pei
- 代理机构： Schmeiser, Olsen & Watts LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations mainly implants both phosphorous and arsenic ions on a drain area of a transistor memory unit, and controls specific energy and dosage for the implantation to reduce the defects of a memory device and improve the yield rate of the NOR flash memory.
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