发明授权
- 专利标题: Compensation for voltage drifts in analog memory cells
- 专利标题(中): 补偿模拟存储单元中的电压漂移
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申请号: US12251471申请日: 2008-10-15
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公开(公告)号: US08000141B1公开(公告)日: 2011-08-16
- 发明人: Ofir Shalvi , Naftali Sommer
- 申请人: Ofir Shalvi , Naftali Sommer
- 申请人地址: IL Herzliya Pituach
- 专利权人: Anobit Technologies Ltd.
- 当前专利权人: Anobit Technologies Ltd.
- 当前专利权人地址: IL Herzliya Pituach
- 代理机构: D. Kligler I.P. Services Ltd.
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A method for data storage includes storing data in a group of analog memory cells by writing respective first storage values into the memory cells. After storing the data, respective second storage values are read from the memory cells. A subset of the memory cells, in which the respective second storage values have drifted below a minimum readable value, is identified. The memory cells in the subset are operated on, so as to cause the second storage values of at least one of the memory cells in the subset to exceed the minimum readable value. At least the modified second storage values are re-read so as to reconstruct the stored data.
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