Invention Grant
US07995952B2 High performance materials and processes for manufacture of nanostructures for use in electron emitter ion and direct charging devices
失效
用于制造用于电子发射体离子和直接充电装置的纳米结构的高性能材料和工艺
- Patent Title: High performance materials and processes for manufacture of nanostructures for use in electron emitter ion and direct charging devices
- Patent Title (中): 用于制造用于电子发射体离子和直接充电装置的纳米结构的高性能材料和工艺
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Application No.: US12042878Application Date: 2008-03-05
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Publication No.: US07995952B2Publication Date: 2011-08-09
- Inventor: David H. Pan , Fa-Gung Fan , Joseph A. Swift , Dan A. Hays , Michael F. Zona
- Applicant: David H. Pan , Fa-Gung Fan , Joseph A. Swift , Dan A. Hays , Michael F. Zona
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: MH2 Technology Law Group LLP
- Main IPC: G03G21/16
- IPC: G03G21/16 ; H05B39/00 ; G09G3/10

Abstract:
In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.
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