发明授权
US07993999B2 High-K/metal gate CMOS finFET with improved pFET threshold voltage
有权
高K /金属栅极CMOS finFET，具有改善的pFET阈值电压
- 专利标题： High-K/metal gate CMOS finFET with improved pFET threshold voltage
- 专利标题（中）： 高K /金属栅极CMOS finFET，具有改善的pFET阈值电压
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申请号： US12614906申请日： 2009-11-09
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公开(公告)号： US07993999B2公开(公告)日： 2011-08-09
- 发明人: Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz
- 申请人： Veeraraghavan S. Basker , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A device and method for fabrication of fin devices for an integrated circuit includes forming fin structures in a semiconductor material of a semiconductor device wherein the semiconductor material is exposed on sidewalls of the fin structures. A donor material is epitaxially deposited on the exposed sidewalls of the fin structures. A condensation process is applied to move the donor material through the sidewalls into the semiconductor material such that accommodation of the donor material causes a strain in the semiconductor material of the fin structures. The donor material is removed, and a field effect transistor is formed from the fin structure.
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