发明授权
- 专利标题： Image sensor and method for manufacturing the same
- 专利标题（中）： 图像传感器及其制造方法
-
申请号： US12344442申请日： 2008-12-26
-
公开(公告)号： US07989860B2公开(公告)日： 2011-08-02
- 发明人: Ji-Young Park
- 申请人： Ji-Young Park
- 申请人地址： KR Seoul
- 专利权人： Dongbu HiTek Co., Ltd.
- 当前专利权人： Dongbu HiTek Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Sherr & Vaughn, PLLC
- 优先权： KR10-2007-0139452 20071227
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
An image sensor includes a circuitry, a substrate, an electrical junction region, a high concentration first conduction type region, and a photodiode. The circuitry includes a transistor and is formed on and/or over the substrate. The electrical junction region is formed in one side of the transistor. The high concentration first conduction type region is formed on and/or over the electrical junction region. The photodiode is formed over the circuitry.
公开/授权文献
- US20090166787A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 公开/授权日：2009-07-02
信息查询
IPC分类:
