Invention Grant
- Patent Title: Electron-emitting device
- Patent Title (中): 电子发射器件
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Application No.: US11964014Application Date: 2007-12-25
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Publication No.: US07986080B2Publication Date: 2011-07-26
- Inventor: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Mei Liu , Chi-Neng Mo
- Applicant: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Mei Liu , Chi-Neng Mo
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW96125965A 20070717
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
An electron-emitting device and a fabricating method thereof are provided. First, a substrate, having a first side and a second side which is opposite to the first side, is provided. Afterwards, a first electrode pattern layer is formed on the first side of the substrate. Next, a conductive pattern layer is formed on the substrate and the first electrode pattern layer. After that, an electron-emitting region is formed in the conductive pattern layer. Then, a second electrode pattern layer is formed on the second side of the substrate and partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.
Public/Granted literature
- US20090022881A1 ELECTRON-EMITTING DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2009-01-22
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