发明授权
US07985994B2 Flux-closed STRAM with electronically reflective insulative spacer
有权
带电子反射绝缘垫片的焊剂封闭STRAM
- 专利标题： Flux-closed STRAM with electronically reflective insulative spacer
- 专利标题（中）： 带电子反射绝缘垫片的焊剂封闭STRAM
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申请号： US12239884申请日： 2008-09-29
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公开(公告)号： US07985994B2公开(公告)日： 2011-07-26
- 发明人: Yuankai Zheng , Dimitar V. Dimitrov
- 申请人： Yuankai Zheng , Dimitar V. Dimitrov
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps LLC
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.
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