发明授权
- 专利标题: Error-correction memory architecture for testing production errors
- 专利标题(中): 用于测试生产错误的纠错内存架构
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申请号: US12352113申请日: 2009-01-12
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公开(公告)号: US07984358B1公开(公告)日: 2011-07-19
- 发明人: Yosef Solt , Eitan Joshua
- 申请人: Yosef Solt , Eitan Joshua
- 申请人地址: IL Yokneam
- 专利权人: Marvell Israel (M.I.S.L) Ltd.
- 当前专利权人: Marvell Israel (M.I.S.L) Ltd.
- 当前专利权人地址: IL Yokneam
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A system includes a first circuit generating error-correction (EC) bits based on test data. Memory comprises a plurality of memory lines each including a data portion storing the test data and an error-correction (EC) portion storing corresponding ones of the EC bits. An input receives the test data. A switching device selectively outputs one of the test data from the input and the EC bits and the test data from the first circuit to the memory. The test data comprise T pairs of test vectors. A first test vector of each of the T pairs of test vectors is an inverse of a second test vector of each of the T pairs of test vectors. Each of the first test vectors in the T pairs of test vectors is unique and each of the second test vectors in the T pairs of test vectors is unique. T is an integer greater than one.
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