发明授权
US07979811B2 Intermediate layout for resolution enhancement in semiconductor fabrication
有权
用于半导体制造中分辨率增强的中间布局
- 专利标题: Intermediate layout for resolution enhancement in semiconductor fabrication
- 专利标题(中): 用于半导体制造中分辨率增强的中间布局
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申请号: US12099663申请日: 2008-04-08
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公开(公告)号: US07979811B2公开(公告)日: 2011-07-12
- 发明人: Shao-Po Wu , Xin Wang , Hongbo Tang , Meg Hung
- 申请人: Shao-Po Wu , Xin Wang , Hongbo Tang , Meg Hung
- 申请人地址: US CA Los Gatos
- 专利权人: Tela Innovations, Inc.
- 当前专利权人: Tela Innovations, Inc.
- 当前专利权人地址: US CA Los Gatos
- 代理机构: Martine Penilla & Gencarella, LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
Intermediate resolution-enhancement state layouts are generated based upon an original non-resolution enhanced layout of an integrated circuit and an associated resolution-enhanced layout. The intermediate resolution-enhancement state layout includes fragments corresponding to parts of the original layout and biases associated with the fragments, where the biases indicate distances between the fragments and the resolution-enhanced layout. The fragments are also assigned attributes such as fragment type, fragment location, and biases. The intermediate resolution-enhancement state layouts can be combined to generate the layout for a full chip IC. Two or more intermediate resolution-enhancement state layouts are assembled and are locally reconverged to adjust the resolution enhancement associated with the intermediate resolution-enhancement state layouts and obtain the intermediate resolution-enhancement state layouts for the full IC.
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