发明授权
- 专利标题: Memory test device and memory test method
- 专利标题(中): 内存测试设备和内存测试方法
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申请号: US12331701申请日: 2008-12-10
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公开(公告)号: US07979761B2公开(公告)日: 2011-07-12
- 发明人: Bum-keun Kim , Kyung-young Kim , Jung-hwan Oh , Beom-seok Lee
- 申请人: Bum-keun Kim , Kyung-young Kim , Jung-hwan Oh , Beom-seok Lee
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd
- 当前专利权人: Samsung Electronics Co., Ltd
- 当前专利权人地址: KR Suwon-si
- 代理机构: Jefferson IP Law, LLP
- 优先权: KR10-2008-0053786 20080609
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A memory test device, including a universal register to conduct an operation by a predetermined universal command language; an extension register having a larger capacity than the universal register and to conduct an operation by a predetermined extension command language; and a controller to write a predetermined test pattern in an external memory using the extension command language, to read the test pattern written in the memory, to determine the identity of the written test pattern and the read test pattern, and to determine a presence of an error in the memory using the universal command language.
公开/授权文献
- US20090307544A1 MEMORY TEST DEVICE AND MEMORY TEST METHOD 公开/授权日:2009-12-10
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