发明授权
- 专利标题: Re-flash protection for flash memory
- 专利标题(中): 重新闪存保护闪存
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申请号: US12252930申请日: 2008-10-16
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公开(公告)号: US07979628B2公开(公告)日: 2011-07-12
- 发明人: Boris Dolgunov , Arseniy Aharonov
- 申请人: Boris Dolgunov , Arseniy Aharonov
- 申请人地址: IL Kfar Saba
- 专利权人: SanDisk IL Ltd.
- 当前专利权人: SanDisk IL Ltd.
- 当前专利权人地址: IL Kfar Saba
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: IL187036 20071030
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/00 ; G06F13/28
摘要:
A method for storing data includes providing a memory package including an integrated circuit containing a non-volatile memory and counter circuitry. The data is written to the non-volatile memory. The counter circuitry is operated to maintain a count of write operations performed on the non-volatile memory. The data and the count from the memory package are received at a controller, separate from the memory package, and the data is authenticated in response to the count.
公开/授权文献
- US20090113117A1 RE-FLASH PROTECTION FOR FLASH MEMORY 公开/授权日:2009-04-30
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