发明授权
US07978502B2 Method of programming a memory device of the one-time programmable type and integrated circuit incorporating such a memory
有权
编程一体化可编程类型的存储器件和并入这种存储器的集成电路的方法
- 专利标题： Method of programming a memory device of the one-time programmable type and integrated circuit incorporating such a memory
- 专利标题（中）： 编程一体化可编程类型的存储器件和并入这种存储器的集成电路的方法
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申请号： US12415299申请日： 2009-03-31
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公开(公告)号： US07978502B2公开(公告)日： 2011-07-12
- 发明人: Joel Damien
- 申请人： Joel Damien
- 申请人地址： FR Montrouge
- 专利权人： STMicroelectronics S.A.
- 当前专利权人： STMicroelectronics S.A.
- 当前专利权人地址： FR Montrouge
- 代理机构： Gardere Wynne & Sewell LLP
- 代理商 Andre M. Szuwalski
- 优先权： FR0852354 20080408
- 主分类号： G11C11/24
- IPC分类号： G11C11/24
摘要：
A memory device of the irreversibly electrically programmable type is provided with a memory cell having a dielectric zone disposed between a first electrode and second electrode. An access transistor is connected in series with the second electrode, and an auxiliary transistor is connected in series with the first electrode. The auxiliary transistor is biased to have a saturation current which is lower than a saturation current of the access transistor when both the auxiliary and access transistors are actuated. A number of the memory cells are arranged in a memory plane to form the memory device.
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