发明授权
US07978031B2 High frequency module provided with power amplifier 有权
配有功率放大器的高频模块

High frequency module provided with power amplifier
摘要:
The present invention is provided with a high frequency module comprising a multilayered substrate, a power amplifier IC mounted on the upper surface of the multilayered substrate, first and second filters disposed substantially directly below the power amplifier IC in an inner layer of the multilayered substrate, and coupling-reducing ground vias disposed between the first filter and the second filter. At least the first filter is disposed substantially directly below the power amplifier IC. The coupling-reducing ground vias double as thermal vias for dissipating heat generated by the power amplifier IC.
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