发明授权
- 专利标题： Ferroelectrics and ferromagnetics for noise isolation in integrated circuits, packaging, and system architectures
- 专利标题（中）： 用于集成电路，封装和系统架构中的噪声隔离的铁电和铁磁体
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申请号： US12214696申请日： 2008-06-20
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公开(公告)号： US07977758B2公开(公告)日： 2011-07-12
- 发明人: Markondeya Raj Pulugurtha , Madhaven Swaminathan , Mahadevan Krishna Iyer , Rao Tummala , Isaac Robin Abothu , Jin Hyun Hwang
- 申请人： Markondeya Raj Pulugurtha , Madhaven Swaminathan , Mahadevan Krishna Iyer , Rao Tummala , Isaac Robin Abothu , Jin Hyun Hwang
- 申请人地址： US GA Atlanta
- 专利权人： Georgia Tech Research Corporation
- 当前专利权人： Georgia Tech Research Corporation
- 当前专利权人地址： US GA Atlanta
- 代理机构： Troutman Sanders LLP
- 代理商 Ryan A. Schneider; Dustin B. Weeks
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.
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