发明授权
US07977754B2 Poly resistor and poly eFuse design for replacement gate technology
有权
Poly电阻和poly eFuse设计替代栅极技术
- 专利标题： Poly resistor and poly eFuse design for replacement gate technology
- 专利标题（中）： Poly电阻和poly eFuse设计替代栅极技术
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申请号： US12201602申请日： 2008-08-29
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公开(公告)号： US07977754B2公开(公告)日： 2011-07-12
- 发明人: Harry Chuang , Kong-Beng Thei
- 申请人： Harry Chuang , Kong-Beng Thei
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
A semiconductor device and method for fabricating a semiconductor device is disclosed. The semiconductor device comprises a semiconductor substrate; an active region of the substrate, wherein the active region includes at least one transistor; and a passive region of the substrate, wherein the passive region includes at least one resistive structure disposed on an isolation region, the at least one resistive structure in a lower plane than the at least one transistor.
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