发明授权
US07977744B2 Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls
有权
具有填充有绝缘材料的沟槽的场效应晶体管和沿沟槽侧壁的半绝缘材料条
- 专利标题： Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls
- 专利标题（中）： 具有填充有绝缘材料的沟槽的场效应晶体管和沿沟槽侧壁的半绝缘材料条
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申请号： US11862396申请日： 2007-09-27
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公开(公告)号： US07977744B2公开(公告)日： 2011-07-12
- 发明人: Steven Sapp , Peter H. Wilson
- 申请人： Steven Sapp , Peter H. Wilson
- 申请人地址： US CA San Jose
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L29/00
摘要：
A MOSFET comprises a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material are insulated from the first semiconductor region.
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