- 专利标题： HBT/FET process integration
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申请号： US11941065申请日： 2007-11-15
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公开(公告)号： US07977708B1公开(公告)日： 2011-07-12
- 发明人: Timothy Henderson , Jeremy Middleton , Sumir Varma , Corey Jordan , Gerard Mahoney , Bradley Avrit , Lucius Rivers
- 申请人： Timothy Henderson , Jeremy Middleton , Sumir Varma , Corey Jordan , Gerard Mahoney , Bradley Avrit , Lucius Rivers
- 申请人地址： US OR Hillsboro
- 专利权人： Triquint Semiconductor, Inc.
- 当前专利权人： Triquint Semiconductor, Inc.
- 当前专利权人地址： US OR Hillsboro
- 代理机构： Schwabe Williamson & Wyatt
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.
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