发明授权
US07977706B2 Tri-gate field-effect transistors formed by aspect ratio trapping
有权
通过纵横比捕获形成的三栅极场效应晶体管
- 专利标题： Tri-gate field-effect transistors formed by aspect ratio trapping
- 专利标题（中）： 通过纵横比捕获形成的三栅极场效应晶体管
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申请号： US12856402申请日： 2010-08-13
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公开(公告)号： US07977706B2公开(公告)日： 2011-07-12
- 发明人: Anthony J. Lochtefeld
- 申请人： Anthony J. Lochtefeld
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process embodiments include removing a portion of the dielectric layer to expose a side portion of the crystalline material and defining a gate thereover. Defects are reduced by using an aspect ratio trapping approach.
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