发明授权
- 专利标题: Semiconductor light-emitting material with tetrahedral structure formed therein
- 专利标题(中): 在其中形成四面体结构的半导体发光材料
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申请号: US11531426申请日: 2006-09-13
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公开(公告)号: US07977693B2公开(公告)日: 2011-07-12
- 发明人: Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
- 申请人: Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-370250 20051222
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
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