- 专利标题: Techniques for use of nanotechnology in photovoltaics
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申请号: US12544066申请日: 2009-08-19
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公开(公告)号: US07977690B2公开(公告)日: 2011-07-12
- 发明人: Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
- 申请人: Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Vazken Alexanian; Michael J. Chang, LLC
- 主分类号: H01L29/18
- IPC分类号: H01L29/18
摘要:
Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.
公开/授权文献
- US20100108131A1 Techniques for Use of Nanotechnology in Photovoltaics 公开/授权日:2010-05-06
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