发明授权
- 专利标题： Nitride-based light emitting device
- 专利标题（中）： 基于氮化物的发光器件
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申请号： US11878642申请日： 2007-07-25
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公开(公告)号： US07977665B2公开(公告)日： 2011-07-12
- 发明人: Yong Tae Moon
- 申请人： Yong Tae Moon
- 申请人地址： KR Seoul
- 专利权人： LG Electronics Inc. & LG Innotek Co., Ltd.
- 当前专利权人： LG Electronics Inc. & LG Innotek Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： McKenna Long & Aldridge LLP
- 优先权： KR10-2006-0070212 20060726; KR10-2007-0055360 20070607
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.
公开/授权文献
- US20080023690A1 Nitride-based light emitting device 公开/授权日：2008-01-31
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