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US07977196B2 Semiconductor device with increased channel area and fabrication method thereof
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具有增加的通道面积的半导体器件及其制造方法
- 专利标题： Semiconductor device with increased channel area and fabrication method thereof
- 专利标题（中）： 具有增加的通道面积的半导体器件及其制造方法
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申请号： US12648231申请日： 2009-12-28
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公开(公告)号： US07977196B2公开(公告)日： 2011-07-12
- 发明人: Jun-Hee Cho
- 申请人： Jun-Hee Cho
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： KR2006-0029870 20060331; KR2006-0124736 20061208
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/80
摘要：
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.
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