发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12502891申请日： 2009-07-14
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公开(公告)号： US07977189B2公开(公告)日： 2011-07-12
- 发明人: Masahiko Higashi
- 申请人： Masahiko Higashi
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention relates to a semiconductor device that includes a semiconductor substrate (10) having source/drain diffusion regions (14) formed therein and control gates (20) formed thereon, with grooves (18) being formed on the surface of the semiconductor substrate (10) and being located below the control gates (20) and between the source/drain diffusion regions (14). The grooves (18) are separated from the source/drain diffusion regions (14), thereby increasing the effective channel length to maintain a constant channel length for charge accumulation while enabling the manufacture of smaller memory cells. The present invention also provides a method of manufacturing the semiconductor device.
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