发明授权
- 专利标题： Method of producing a field effect transistor arrangement
- 专利标题（中）： 产生场效应晶体管布置的方法
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申请号： US12604771申请日： 2009-10-23
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公开(公告)号： US07977167B2公开(公告)日： 2011-07-12
- 发明人: Karl Hofmann , Luis-Felipe Giles
- 申请人： Karl Hofmann , Luis-Felipe Giles
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A method of producing a field effect transistor arrangement. A substrate having a first crystal surface orientation is provided. A first layer is formed above a first portion of the substrate, the first layer having a second crystal surface orientation different from the first crystal surface orientation. A second layer is formed on at least a second portion of the substrate and adjacent to the first layer, the second layer having the first crystal surface orientation. A first buried oxide layer is formed between the substrate and the first layer. Micro-cavities are formed in the second layer and oxidizing the micro-cavities, thereby forming a second buried oxide layer between the substrate and the second layer. A first field effect transistor of a first conductivity type is formed in or on the first layer. A second field effect transistor of a second conductivity type is formed in or on the second layer.
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