发明授权
- 专利标题： Method for reducing plasma discharge damage during processing
- 专利标题（中）： 减少加工过程中等离子体放电损伤的方法
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申请号： US12125856申请日： 2008-05-22
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公开(公告)号： US07951695B2公开(公告)日： 2011-05-31
- 发明人: David M. Schraub , Terry A. Breeden , James D. Legg , Mehul D. Shroff , Ruiqi Tian
- 申请人： David M. Schraub , Terry A. Breeden , James D. Legg , Mehul D. Shroff , Ruiqi Tian
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Hamilton & Terrile, LLP
- 代理商 Michael Rocco Cannatti
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; H01L21/42
摘要：
A semiconductor process and apparatus to provide a way to reduce plasma-induced damage by applying a patterned layer of photoresist (114) which includes resist openings formed (117) over the active circuit areas (13, 14) as well as additional resist openings (119) formed over inactive areas (15) in order to maintain the threshold coverage level to control the amount of resist coverage over a semiconductor structure so that the total amount of resist coverage is at or below a threshold coverage level. Where additional resist openings (119) are required in order to maintain the threshold coverage level, these openings may be used to create additional charge dissipation structures (e.g., 152) for use in manufacturing the final structure.
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