Invention Grant
US07944747B2 Flash memory device and method for programming flash memory device having leakage bit lines
有权
用于编程具有泄漏位线的闪存器件的闪存器件和方法
- Patent Title: Flash memory device and method for programming flash memory device having leakage bit lines
- Patent Title (中): 用于编程具有泄漏位线的闪存器件的闪存器件和方法
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Application No.: US12400123Application Date: 2009-03-09
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Publication No.: US07944747B2Publication Date: 2011-05-17
- Inventor: Dong-Hyuk Chae , Young-Ho Lim
- Applicant: Dong-Hyuk Chae , Young-Ho Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: KR200824526 20080317; KR200824530 20080317
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
Provided is a method for programming a flash memory device. The method includes receiving writing data, detecting leakage bit lines of the flash memory device, and updating the received writing data in order for data corresponding to the leakage bit lines to be modified as program-inhibit data. A programming operation is performed on the flash memory device after updating the writing data.
Public/Granted literature
- US20090231917A1 FLASH MEMORY DEVICE AND METHOD FOR PROGRAMMING FLASH MEMORY DEVICE HAVING LEAKAGE BIT LINES Public/Granted day:2009-09-17
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