发明授权
- 专利标题: Penetrating implant for forming a semiconductor device
- 专利标题(中): 用于形成半导体器件的穿透植入物
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申请号: US12059455申请日: 2008-03-31
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公开(公告)号: US07943468B2公开(公告)日: 2011-05-17
- 发明人: Giuseppe Curello , Ian R. Post , Nick Lindert , Walid M. Hafez , Chia-Hong Jan , Mark T. Bohr
- 申请人: Giuseppe Curello , Ian R. Post , Nick Lindert , Walid M. Hafez , Chia-Hong Jan , Mark T. Bohr
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.
公开/授权文献
- US20090242998A1 PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE 公开/授权日:2009-10-01
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