发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12714750申请日： 2010-03-01
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公开(公告)号： US07924615B2公开(公告)日： 2011-04-12
- 发明人: Natsuo Ajika , Shoji Shukuri , Masaaki Mihara , Yoshiki Kawajiri
- 申请人： Natsuo Ajika , Shoji Shukuri , Masaaki Mihara , Yoshiki Kawajiri
- 申请人地址： JP Hyogo
- 专利权人： Genusion, Inc.
- 当前专利权人： Genusion, Inc.
- 当前专利权人地址： JP Hyogo
- 代理机构： The Marbury Law Group PLLC
- 优先权： JPP2006-066627 20060310
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
The present invention relates to a nonvolatile semiconductor memory, and more specifically relates to a nonvolatile semiconductor memory with increased program throughput. The present invention provides a nonvolatile semiconductor memory device with a plurality of block source lines corresponding to the memory blocks, arranged in parallel to the word lines, a plurality of global source lines arranged in perpendicular to the block source lines; and a plurality of switches for selectively connecting corresponding ones of the block source lines and the global source lines.
公开/授权文献
- US20100149875A1 Nonvolatile Semiconductor Memory Device 公开/授权日：2010-06-17
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