发明授权
- 专利标题： Nonvolatile semiconductor memory
- 专利标题（中）： 非易失性半导体存储器
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申请号： US12547892申请日： 2009-08-26
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公开(公告)号： US07924598B2公开(公告)日： 2011-04-12
- 发明人: Mariko Hase , Toshimasa Namekawa
- 申请人： Mariko Hase , Toshimasa Namekawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-005336 20090114
- 主分类号： G11C17/16
- IPC分类号： G11C17/16
摘要：
A nonvolatile semiconductor memory according to an aspect of the invention includes a memory cell array and a power supply circuit. The memory cell array includes memory cells each having an insulating film and being programmed to store information by inflicting an electric stress on the insulating film to break the insulating film. The power supply circuit supplies to the memory cell a program voltage for the electric stress depending on a negative temperature coefficient the electric stress.
公开/授权文献
- US20100177550A1 NONVOLATILE SEMICONDUCTOR MEMORY 公开/授权日：2010-07-15
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