发明授权
US07923815B2 DRAM having deep trench capacitors with lightly doped buried plates
有权
DRAM具有具有轻掺杂掩埋板的深沟槽电容器
- 专利标题： DRAM having deep trench capacitors with lightly doped buried plates
- 专利标题（中）： DRAM具有具有轻掺杂掩埋板的深沟槽电容器
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申请号： US11969986申请日： 2008-01-07
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公开(公告)号： US07923815B2公开(公告)日： 2011-04-12
- 发明人: Geng Wang , Kangguo Cheng , Johnathan E. Faltermeier , Paul C. Parries
- 申请人： Geng Wang , Kangguo Cheng , Johnathan E. Faltermeier , Paul C. Parries
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joseph P. Abate; Howard M. Cohn
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may be storage capacitors of DRAM/eDRAM cells. The doping concentration may be less than 3E19cm−3, a voltage difference between the biases of the buried electrodes may be at least 0.5V, and a capacitance of one capacitor may be at least 1.2 times, such as 2.0 times the capacitance of another capacitor.
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