发明授权
US07923808B2 Structure of very high insertion loss of the substrate noise decoupling
有权
非常高的衬底噪声去耦插入损耗的结构
- 专利标题： Structure of very high insertion loss of the substrate noise decoupling
- 专利标题（中）： 非常高的衬底噪声去耦插入损耗的结构
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申请号： US11942811申请日： 2007-11-20
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公开(公告)号： US07923808B2公开(公告)日： 2011-04-12
- 发明人: Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- 申请人： Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.
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