发明授权
- 专利标题： Semiconductor light-emitting device
- 专利标题（中）： 半导体发光装置
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申请号： US12755019申请日： 2010-04-06
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公开(公告)号： US07923744B2公开(公告)日： 2011-04-12
- 发明人: Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
- 申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
- 申请人地址： TW Taichung
- 专利权人： HUGA Optotech Inc.
- 当前专利权人： HUGA Optotech Inc.
- 当前专利权人地址： TW Taichung
- 代理机构： Jianq Chyun IP Office
- 优先权： TW97106193A 20080222
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
公开/授权文献
- US20100230706A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 公开/授权日：2010-09-16
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