发明授权
- 专利标题： Thin film transistor and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12461193申请日： 2009-08-04
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公开(公告)号： US07923735B2公开(公告)日： 2011-04-12
- 发明人: Ki-Nyeng Kang , Chul-Kyu Kang , Jong-Hyun Choi
- 申请人： Ki-Nyeng Kang , Chul-Kyu Kang , Jong-Hyun Choi
- 申请人地址： KR Yongin, Gyunggi-do
- 专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人地址： KR Yongin, Gyunggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2009-0002233 20090112
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L29/12
摘要：
A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
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