发明授权
- 专利标题: Manufacturing method of semiconductor devices
- 专利标题(中): 半导体器件的制造方法
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申请号: US11576363申请日: 2006-07-10
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公开(公告)号: US07923351B2公开(公告)日: 2011-04-12
- 发明人: Kiyoshi Arita
- 申请人: Kiyoshi Arita
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2005-201536 20050711
- 国际申请: PCT/JP2006/314114 WO 20060710
- 国际公布: WO2007/007883 WO 20070118
- 主分类号: H01L21/463
- IPC分类号: H01L21/463 ; H01L21/467 ; H01L21/78
摘要:
In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles.
公开/授权文献
- US20090209087A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES 公开/授权日:2009-08-20
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