发明授权
- 专利标题: Surface emitting laser and manufacturing method thereof
- 专利标题(中): 表面发射激光器及其制造方法
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申请号: US12544243申请日: 2009-08-20
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公开(公告)号: US07923275B2公开(公告)日: 2011-04-12
- 发明人: Shigeru Nakagawa
- 申请人: Shigeru Nakagawa
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 William Stock; Anne Vachon Dougherty
- 优先权: JP2006-343177 20061220
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
公开/授权文献
- US20090311812A1 SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF 公开/授权日:2009-12-17
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