发明授权
- 专利标题: Semiconductor integrated circuit device and method of fabricating the semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件及半导体集成电路器件的制造方法
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申请号: US12055035申请日: 2008-03-25
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公开(公告)号: US07920400B2公开(公告)日: 2011-04-05
- 发明人: Ju-Yong Lee , Sung-Ho Jang , Tae-Young Chung , Joon Han
- 申请人: Ju-Yong Lee , Sung-Ho Jang , Tae-Young Chung , Joon Han
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2007-0041561 20070427
- 主分类号: G11C5/06
- IPC分类号: G11C5/06
摘要:
A semiconductor integrated circuit device having a 6F2 layout is provided. The semiconductor integrated circuit device includes a substrate; a plurality of unit active regions disposed in the substrate and extending in a first direction; first and second access transistors including first and second gate lines disposed on the substrate and extending across the unit active regions in a second direction forming an acute angle with the first direction; a first junction area disposed in the substrate between the first and second gate lines and second junction areas disposed on sides of the first and second gate lines where the first junction area is not disposed; a plurality of bitlines disposed on the substrate and extending in a third direction forming an acute angle with the first direction; and a plurality of bitline contacts directly connecting the first junction area and the bitlines.
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