发明授权
US07920400B2 Semiconductor integrated circuit device and method of fabricating the semiconductor integrated circuit device 有权
半导体集成电路器件及半导体集成电路器件的制造方法

Semiconductor integrated circuit device and method of fabricating the semiconductor integrated circuit device
摘要:
A semiconductor integrated circuit device having a 6F2 layout is provided. The semiconductor integrated circuit device includes a substrate; a plurality of unit active regions disposed in the substrate and extending in a first direction; first and second access transistors including first and second gate lines disposed on the substrate and extending across the unit active regions in a second direction forming an acute angle with the first direction; a first junction area disposed in the substrate between the first and second gate lines and second junction areas disposed on sides of the first and second gate lines where the first junction area is not disposed; a plurality of bitlines disposed on the substrate and extending in a third direction forming an acute angle with the first direction; and a plurality of bitline contacts directly connecting the first junction area and the bitlines.
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