发明授权
- 专利标题： RF power transistor structure and a method of forming the same
- 专利标题（中）： RF功率晶体管结构及其形成方法
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申请号： US12255421申请日： 2008-10-21
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公开(公告)号： US07919801B2公开(公告)日： 2011-04-05
- 发明人: Bishnu Prasanna Gogoi
- 申请人： Bishnu Prasanna Gogoi
- 申请人地址： US AZ Phoenix
- 专利权人： HVVi Semiconductors, Inc.
- 当前专利权人： HVVi Semiconductors, Inc.
- 当前专利权人地址： US AZ Phoenix
- 代理机构： Cool Patent, P.C.
- 代理商 Kenneth J. Cool
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
公开/授权文献
- US20090261421A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE 公开/授权日：2009-10-22
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