- 专利标题: Thin film transisitor array panel and manufacturing method thereof
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申请号: US12572231申请日: 2009-10-01
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公开(公告)号: US07916226B2公开(公告)日: 2011-03-29
- 发明人: Chang-Hun Lee , Hyun-Wuk Kim , Mee-Hye Jung , Kyoung-Ju Shin , Hak-Sun Chang , Yoon-Sung Um
- 申请人: Chang-Hun Lee , Hyun-Wuk Kim , Mee-Hye Jung , Kyoung-Ju Shin , Hak-Sun Chang , Yoon-Sung Um
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2004-0085325 20041025
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343
摘要:
A thin film transistor array panel according to an embodiment includes: a substrate; a plurality of gate line formed on the substrate; a plurality of first capacitor electrodes formed on the substrate and separated from the gate lines; a plurality of data line intersecting the gate lines; a plurality of thin film transistor connected to the gate lines and the data lines; a plurality of second capacitor electrodes disposed on the first electrode; a plurality of interconnections connected to the second capacitor electrodes and the thin film transistor and disposed symmetrical to the data lines; and a plurality of pixel electrode, each pixel electrode including a first subpixel electrode connected to one of the thin film transistors and a second subpixel electrode connected to one of the first capacitor electrodes.
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