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发明授权
US07915681B2 Transistor with reduced charge carrier mobility 有权
具有降低的载流子迁移率的晶体管

Transistor with reduced charge carrier mobility
摘要：
A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.
摘要（中）：

一种器件包括：第一晶体管，包括鳍片和包括鳍片的第二晶体管，第一晶体管的鳍片具有比第二晶体管鳍片更低的载流子迁移率。 在一种方法中，第一晶体管的鳍被处理为具有比第二晶体管的鳍更低的载流子迁移率。

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