发明授权
- 专利标题： Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module
- 专利标题（中）： 氮化硅衬底，氮化硅衬底的制造方法，使用氮化硅衬底的氮化硅衬底板和半导体模块
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申请号： US11911794申请日： 2006-04-14
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公开(公告)号： US07915533B2公开(公告)日： 2011-03-29
- 发明人: Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
- 申请人： Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Metals, Ltd.
- 当前专利权人： Hitachi Metals, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Akerman Senterfitt LLP
- 代理商 Paul F. Neils, Esq.
- 优先权： JP2005-133292 20050428
- 国际申请： PCT/JP2006/307936 WO 20060414
- 国际公布： WO2006/118003 WO 20061109
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01B3/12 ; H05K7/06
摘要：
In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
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